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| SMD Signal DMOS Transistor (N-Channel) 2N7002 SMD Signal DMOS Transistor (N-Channel) Features * * * * * Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Marking Code Description 2N7002 WA 60 20 300 1200 300 150 -55 to +150 V V mA mA mW C C Unit Conditions VDSS VGSS ID IDP Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed (Note 1) Drain Power Dissipation (Note 2) Junction Temperature Storage Temperature Range PD TJ TSTG Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol Description Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Min. 60 Typ. Max. 1 100 -100 Unit V A nA Conditions VGS= 0V, ID=10uA VDS= 60V, VGS= 0V VDS= 0V, VGS= 20V VDS= 0V, VGS= -20V BVDSS IDSS IGSSF IGSSR TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/NX 2007-12-22 Page 1 of 7 SMD Signal DMOS Transistor (N-Channel) 2N7002 Electrical Characteristics (T Ambient=25C) (Note 3) Symbol Description Gate Threshold Voltage Drain-Source ON Resistance Min. 1.1 500 200 Typ. 1.8 1.2 1.5 0.6 0.075 580 0.78 Max. 2.3 1.8 2.1 0.9 0.105 1.15 V mA mS V Unit V Conditions VDS= VGS, ID=250A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, VDS 2VDS(ON) VDS=10V, ID=500mA VGS=0V, IS=200mA Vth RDS(ON) VDS(ON) ID(ON) Drain-Source ON Voltage On State Drain Current Forward Transconductance Drain-Source Diode Forward Voltage (Note 1) gFS VSD Dynamic Characteristics (T Ambient=25C unless noted otherwise) Symbol Description Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-On Time Switching Time Turn-Off Time Min. Typ. 47.1 3.5 8.8 8.8 14.8 Max. nS VDD=30V, RL=155 ID=190mA, VGS=10V pF VDS= 25V, VGS = 0V, f=1MHz Unit Conditions Ciss Crss Coss ton toff Note: (1) Pulse Width10us, Duty Cycle1% (2) Package mounted on a glass epoxy PCB 3.94'' x 3.94'' x 0.04'' (3) Pulse Test: Pulse Width80s, Duty Cycle1% Switching Time Test Circuit Rev. A/JX 2007-12-22 www.taitroncomponents.com Page 2 of 7 SMD Signal DMOS Transistor (N-Channel) 2N7002 Typical Characteristics Curves Fig.1- Output Characteristics Drain Source On-Resistance RDS(ON) () Fig.2- On-Resistance vs. Drain Current Drain Current ID (A) Drain-Source Voltage VDS (V) Drain Current ID (A) Drain Source On-Resistance RDS () Fig.3- On-Resistance vs. Junction Temperature Fig.4- Transfer Characteristics Junction Temperature TJ () Drain Current ID (A) Gate-Source Voltage VGS (V) Rev. A/JX 2007-12-22 www.taitroncomponents.com Page 3 of 7 SMD Signal DMOS Transistor (N-Channel) 2N7002 Fig.5- Threshold Characteristics Gate-Source Threshold Voltage (A) Fig.6- Source-Drain Diode Forward Voltage Source Current IS (A) Junction Temperature TJ () Source-to-Drain Voltage VSD (V) Fig.7- Capacitance Fig.8- Gate Charge Drain-Source Voltage VDS (V) Gate-Source Voltage VGS (V) Capacitance (pF) Gate Charge Qg (nC) Rev. A/JX 2007-12-22 www.taitroncomponents.com Page 4 of 7 SMD Signal DMOS Transistor (N-Channel) 2N7002 Fig.9- Safe Operating Area Drain Power Dissipation PD (mW) Fig.10- Power Dissipation vs. Ambient Temperature Drain Current ID (A) Drain-Source Voltage VDS (V) Ambient Temperature Ta ( C) Equivalent Circuit This transistor is electrostatic sensitive device. Please handle with caution. Rev. A/JX 2007-12-22 www.taitroncomponents.com Page 5 of 7 SMD Signal DMOS Transistor (N-Channel) 2N7002 Marking Dimensions in mm 1. Source 2. Gate 3. Drain SOT-23 Rev. A/JX 2007-12-22 www.taitroncomponents.com Page 6 of 7 SMD Signal DMOS Transistor (N-Channel) 2N7002 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/JX 2007-12-22 www.taitroncomponents.com Page 7 of 7 |
Price & Availability of 2N7002
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